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| 2N6661/VN88AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number 2N6661 VN88AFD V(BR)DSS Min (V) 90 80 rDS(on) Max (W) 4 @ VGS = 10 V 4 @ VGS = 10 V VGS(th) (V) 0.8 to 2 0.8 to 2.5 ID (A) 0.9 1.29 Features D D D D D Low On-Resistance: 3.6 W Low Threshold: 1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 6 ns Low Input and Output Leakage Benefits D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage Applications D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays TO-220SD (Tab-Drain) D TO-205AD (TO-39) S 1 G 2 G Top View 2N6661 3 D SGD Front View VN88AFD S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta TC = 25_C TC = 100_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM PD RthJA RthJC TJ, Tstg 2N6661 90 "20 0.9 0.7 "3 6.25 2.5 170 VN88AFD 80 "30 1.29 0.81 "3 15 6 Unit V A Power Dissipation Maximum Junction-to-Ambientb Maximum Junction-to-Case W _C/W _C 8.3 -55 to 150 Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. b. This parameter not registered with JEDEC. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70224. Siliconix P-37655--Rev. B, 25-Jul-94 1 2N6661/VN88AFD Specificationsa Limits 2N6661 VN88AFD Parameter Static Drain-Source Breakdown Voltage Symbol Test Conditions Typb Min Max Min Max Unit V(BR)DSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 1 mA 125 1.6 1.8 1.3 90 0.8 2 80 0.8 2.5 V Gate-Threshold Voltage VGS(th) TC = 55_C TC = 125_C Gate-Body Gate Body Leakage IGSS VDS = 0 V, VGS = "15 V TC = 125_C VDS = 90 V, VGS = 0 V "100 "500 10 "100 "500 nA Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V VDS = 0.8 x V(BR)DSS, VGS = 0 V TC = 125_C 500 1.8 1.8 3.8 3.6 125_Ce 6.7 350 0.9 170 5.3 4 9 170 1.5 1.5 10 1 500 mA On-State On State Drain Currentc ID( ) D(on) VDS = 15 V, VGS = 10 V VDS = 10 V, VGS = 10 V VGS = 5 V, ID = 0.3 A A 5.6 4 8 mS V W Drain-Source On-Resistancec rDS(on) VGS = 10 V, ID = 1 A TC = Forward Transconductance c gfs VSD VDS = 10 V, ID = 0.5 A IS = 0.86 A, VGS = 0 V Diode Forward Voltage Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain-Source Capacitance Ciss Coss Crss Cds VDS = 24 V, VGS = 0 V S f = 1 MHz 35 15 2 30 50 40 10 40 50 40 10 pF Switchingd Turn-On Time Turn-Off Time tON tOFF VDD = 25 V, RL = 23 W ID ^ 1 A VGEN = 10 V A, RG = 25 W 6 8 10 10 15 ns 15 VNDQ09 Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. e. This parameter not registered with JEDEC. 2 Siliconix P-37655--Rev. B, 25-Jul-94 2N6661/VN88AFD Typical Characteristics (25_C Unless Otherwise Noted) Ohmic Region Characteristics 1.0 TJ = 25_C 0.8 I D - Drain Current (mA) I D - Drain Current (A) 5V 0.6 VGS = 10 V 6V 80 100 Output Characteristics for Low Gate Drive VGS = 3 V 2.8 V 2.6 V TJ = 25_C 4V 60 2.4 V 0.4 3V 0.2 2V 0 0 1.0 2.0 3.0 4.0 5.0 VDS - Drain-to-Source Voltage (V) 0.5 40 2.2 V 20 2.0 V 1.8 V 0 0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) 7 6 Transfer Characteristics TJ = -55_C 125_C rDS(on) - On-Resistance (W ) On-Resistance vs. Gate-to-Source Voltage 0.4 I D - Drain Current (A) 25_C 5 4 3 2 1 0 I D = 0.1 A 0.5 A 1.0 A 0.3 0.2 0.1 VDS = 15 V 0 0 2 4 6 8 10 VGS - Gate-Source Voltage (V) 0 4 8 12 16 20 VGS - Gate-Source Voltage (V) 10 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance vs. Drain Current rDS(on) - Drain-Source On-Resistance (Normalized) TJ = 25_C 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 Normalized On-Resistance vs. Junction Temperature VGS = 10 V 8 6 VGS = 10 V 4 2 0 0 0.5 1.0 1.5 2.0 2.5 ID - Drain Current (A) -50 -10 30 70 110 150 TJ - Junction Temperature (_C) Siliconix P-37655--Rev. B, 25-Jul-94 3 2N6661/VN88AFD Typical Characteristics (25_C Unless Otherwise Noted) (Cont'd) 10 VGS = 5 V I D - Drain Current (mA) 100 1 TJ = 150_C C - Capacitance (pF) Threshold Region 125 VGS = 0 V f = 1 MHz Capacitance 75 50 C oss C rss 0 0.1 125_C 25_C -55_C 0.01 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) C iss 25 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) 15.0 VGS - Gate-to-Source Voltage (V) I D = 1.0 A 12.5 10.0 Gate Charge 100 Load Condition Effects on Switching VDD = 25 V RL = 23 W VGS = 0 to 10 V ID = 1.0 A VDS = 45 V 7.5 72 V 5.0 2.5 0 0 100 200 300 400 500 Qg - Total Gate Charge (pC) t - Switching Time (ns) 10 td(off) tr td(on) tf 1 0.1 ID - Drain Current (A) 1 2 1.0 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Normalized Effective Transient Thermal Impedance, Junction-to-Case (2N6661) 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJC = 20_C/W 3. TJM - TC = PDMZthJC(t) 0.01 0.1 1.0 10 100 1K 10 K t1 - Square Wave Pulse Duration (sec) 4 Siliconix P-37655--Rev. B, 25-Jul-94 |
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